GTRB384608FC-V1
High Power RF GaN-on-SiC HEMT 440 W, 48 V, 3300 - 3800 MHz
Preliminary Information: The GTRB384608FC is a 440-watt (P3dB), GaN-on-SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications.
Product Specifications
- Part Number
- GTRB384608FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 440 W, 48 V, 3300 - 3800 MHz
- Min Frequency (MHz)
- 3300
- Max Frequency(MHz)
- 3800
- P3dB Output Power(W)
- 440
- Gain(dB)
- 12.3
- Efficiency(%)
- 41
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Asymmetric Doherty Design
- Pout (avg): 47.5 dBm
- Pout(3dB): 56.4 dBm
- Pb-free and RoHS compliant
- GaN-on-SiC HEMT Technology