Nitronex News
Nitronex XPT1015 Provides Rugged, Robust and Reliable RF Power Amplifier
Solution
Nitronex's GaN technology passes industry's toughest robustness tests...
See our reliability page for
more information.
NASA Phase I SBIR Awarded to Nitronex.
NASA has awarded Nitronex a Phase I SBIR to study X-Band GaN Power
Amplifiers for Long Range Space RF Telecommunications.
Nitronex's new 48V GaN-on-Si Technology Significantly Expands Market
Opportunities.
New 48V technology from Nitronex enables cooler, more reliable RF power
products.
65V, 230W S-Band transistor demonstrated
Nitronex has demonstrated, for the first time, a 65V, 230W transistor that
operates at over 60% efficiency at S-band.
Nitronex Multi-Stage GaN MMIC Provides
Smallest 50W L-Band PA
PPA1004 delivers smallest wideband 50W military communications PA solution.
Nitronex has shipped over 650,000 GaN-on-Si devices to military and
commercial customers.
Nitronex is presently the only fully-qualified supplier of Gallium
Nitride-on-Silicon (GaN-on-Si) power transistors and MMICs for RF and
Microwave applications.
Rugged, Robust
and Reliable
In 2006, Nitronex released the first GaN qualification
report to the industry. Since then, Nitronex has continued to advance
the technology and has announced a reliable 48V process and the ability to
develop products that survive a 15:1 VSWR at all phase angles, while holding
the device at 90ºC
baseplate.
Check out our reliability page for more
information.
Process technology
Nitronex develops and manufactures a wide range of
GaN-on-Si RF power transistors and MMICs for commercial
and military markets. Unlike digital CMOS, the silicon used by
Nitronex has a high resistivity (10,000 Ω/cm) which provides excellent loss
characteristics at RF and microwave frequencies. Our current portfolio
includes discrete transistor products ranging from DC-6 GHz, and 5W to over
200W of output power. We also offer highly integrated standard and
custom MMIC and hybrid products.
Nitronex Features 5W GaN PA MMIC and 60W Power Transistor
Leading Producer of
GaN-on-Silicon RF Power Devices
