Nitronex’s GaN RF Power Transistors Best Choice For WiMAX
Volume Quantities Now Available
Nitronex’s GaN-on-Silicon
RF power transistors meet or exceed today’s demanding WiMAX
requirements. The WiMAX infrastructure must deliver high performance and
extreme reliability under all operating and ambient conditions. Crucial to
that capability are the RF power transistors driving the power amplifiers
that make WiMAX technology possible. Nitronex’s RF power transistors combine
the superior intrinsic high performance of GaN devices with the economic
benefits and ease of working with large-area standard silicon substrates,
making them ideal for base stations, repeaters, tower-mounted PAs and certain
customer-premises equipment applications.
New
products are in Red
Preview products are in Blue
2300-2700 MHz RF Power Transistors - Click HERE to BUY
NOW!
Click on any Part Number to
access the data sheet
Click on any Package type to access the package drawing
Part |
Package |
Band (GHz) |
I/O Matching |
Max
Supply Voltage (V) |
Output
Power Psat (W) |
Power
Gain (dB) |
CW
Drain Efficiency @ Psat (%) |
Linear Output Power |
| NPT25015 | PO150S | DC-3.0 | - | 32 | 25 / 2.5 GHz | 14 / 2.5 GHz | 58 | 1.5W |
| NPT25100 |
1.8-2.7 |
I |
32 |
90 / 2.5 GHz |
16.5
/ 2.5 GHZ |
62 |
10W |
(1): Linear Output Power 2.0% typical EVM. Single carrier OFDM waveform 64-QAM ¾, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/avg = 10.3 dB @ 0.01% probability on CCDF
3300-3800 MHz RF Power Transistors - Click HERE to BUY
NOW!
Click on any Part Number to access
the data sheet
Click on any Package type to access the package drawing
Part |
Package |
Band (GHz) |
I/O Matching |
Max
Supply Voltage (V) |
Output
Power Psat (W) |
Power Gain (dB)
|
CW
Drain Efficiency @ Psat (%) |
Linear
Output Power |
| NPT35015 | PO150S | 3.0-6.0 | - | 32 | 18 / 3.5 GHz | 11 / 3.5 GHz | 48 | 1.5W |
| NPT35050A | AC780B-2 | 3.3-3.8 | I | 32 | 65 / 3.5 GHz | 12.5 / 3.5 GHz | 45 | 6W |
(1): Linear Output Power 2.0% typical EVM. 2.0% typical EVM. Single carrier OFDM waveform 64-QAM ¾, 8 burst, 20 ms frame, 75% filled, 3.5 MHz channel bandwidth. Peak/avg = 10.3 dB @ 0.01% probability on CCDF
Contact us for samples, evaluation kits or to discuss additional applications for GaN-on-silicon technology with our engineering staff.