Press Releases
January 13, 2010
Nitronex
Ships Over 200,000 Units to CATV Amplifier Supplier
Gallium Nitride Devices Enable Higher Output Power, More Robust CATV line
amplifiers and Reduced CATV Network Cost...
December 2, 2009
Nitronex
and Modelithics Collaborate for Enhanced Non-Linear GaN Device Models
State-of-the-art GaN non-linear models will enable shorter development
timeframes...
November 18, 2009
Nitronex
Expands Asia Pacific Sales Coverage
Increased Nitronex Sales Presence in Asia adds world class product and
engineering support...
January 28, 2009
Nitronex
Launches NPT1007, Industry's First 200W GaN HEMT Power Transistor
Industry's first 200W GaN HEMT is now production ready...
September 30, 2008
Nitronex
Releases 5.1-5.8GHz Performance Data on its 5W GaN-on-Si RF Power Transistor
Performance data expanded to include higher frequencies between 5.1-5.2GHz
and 5.7-5.8GHz...
August 11, 2008
Nitronex
Awarded Phase II STTR Grant to Further Enhance GaN-on-Silicon HEMTs for
High-Frequency Applications
DoD awards Phase II STTR funding for GaN-on-Silicon HEMT technology...
June 16, 2008
Nitronex
Launches GaN Essentials™Initiative to Educate the
Industry Regarding GaN-on-Si Technology
Online resource answers questions about using and evaluating GaN technology...
June 16, 2008
Nitronex
Develops GaN Power Transistor Product Reliability Calculator
Nitronex is the only GaN RF power device manufacturer to provide customers
with full qualification reports on all of its RF power transistors...
May 21, 2008
Nitronex
Names Principal Engineer
Fully-qualified supplier of GaN-on-Si RF power transistors adds industry
expert...
April 29, 2008
Nitronex
Names Principal MMIC Engineer
Addition to MMIC design team further enhances Nitronex's ability to push the
technical limits of GaN technology...
April 22, 2008
Nitronex and Nujira Collaborate on High Efficiency WiMAX Power Amplifiers
March 19, 2008
Nitronex
Develops 45W GaN-on-Si RF Power Transistor for High Peak-to-Average Power
Applications
NPT1004 GaN power transistor addresses 2.5 and 3.5GHz markets...
January 22, 2008
Nitronex
Partners with Prescient Wireless to Develop Broadband 20W Doherty Amplifier
Using GaN-on-Si: 20W GaN-on-Si WiMAX Doherty amplifier
reference design available...
November 19, 2007
Nitronex Received ISO 9001
Quality Management Systems-Requirements Registration Certification: ISO
9001 certification verifies that nitronex’s Quality management System
meets global standards and expectations…
November 12, 2007
Nitronex’s 5W GaN
on Si RF Power Transistor Ready for Volume Production
Product line is extended by addition of 5W pre-driver…
November 6, 2007
Nitronex Qualifies New Wafer Fab for Volume Production
The new state of the art Durham fab is prepared for volume production…
October 2, 2007
Nitronex Expands Agreement with Richardson Electronics to
Include Americas and Asia:
Agreement increases sales support and customer service in the Americas and
all of Asia...
September 26, 2007
Nitronex's GaN-on-Si Broadband Doherty Power Amplifier:
Enhances efficiency and bandwidth for WiMAX applications...
August 15, 2007
Nitronex's 100W GaN on Si RF Power Transistor Enters Volume
Production:
HEMT available for less than 72 cents a watt for peak power...
July 24, 2007
Nitronex Names New Director of Marketing:
With over 10 years experience spanning RF IC amplifier design and technical
marketing...
July, 2007 (Article)
GaN Power HEMT For 2.5GHz WiMAX Applications
As seen in the July 2007 issue of Microwave Journal
June 28, 2007
Nitronex Names Quality Assurance Manager:
Former Quality Manager at AVX brings over 25 years of industry experience...
June 13, 2007
Nitronex Develops 190 and 240 Watt, 48V GaN on Si Products:
NPT25190 and NPT25240 Target WiMAX and LTE Applications...
June 5, 2007
Nitronex Develops 4 Watt Pre-Driver Power Transistor:
GaN on Si power transistor designed for cellular, WiMAX and broadband applications...
May 29, 2007
Nitronex Names New Supply Chain Manager:
GaN on Si component manufacturing specialist adds high-frequency packaging
expert...
May 16, 2007
Nitronex Announces 100W GaN on Si Power Transistor for WiMAX
Applications:
High electron mobility transistor addresses 2.5GHz WiMAX markets...
May 2, 2007
Nitronex Welcomes Distinguished Independent Board Member:
Nitronex board member inducted into New Jersey High-Tech Business Leader
Hall of Fame...
April 3, 2007
Nitronex Director of Technology Development Honored as IEEE
Fellow:
Nitronex engineer recognized by IEEE for contributions in integrated circuit
technology...
March 22, 2007
Nitronex Decides to Keep Corporate Headquarters in North Carolina:
State-of-the-art facility enables expansion of operations for GaN-on-Si RF
power device manufacturer...
March 19, 2007
Nitronex Teams with Rockwell Collins to Develop GaN on Si
Manufacturing Technology
March 14, 2007
Nitronex Names MMIC Product Development Manager:
GaN on Si component manufacturing specialist adds RF component expert...