• Singhal, S., Hanson. A.W., Chaudhari, A., Rajagopal, P., Li, T., Johnson, J.W., Nagy, W., Therrien, R., Park, C., Edwards, A.P., Piner, E.L., Linthicum, K.J., Kizilyalli, I.C. (2007), Qualification and Reliability of a GaN Process Platform, Paper presented at the 2007 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech), Austin,TX. Accompanying PowerPoint Presentation.

• Therrien, R., Nagy, W., Kizilyalli, I.C. (2007), Designing Broadband WiMAX PA Using GaN Power Transistors, Paper published in RF Design, February 2007.

• Singhal, S., Chaudhari, A., Hanson, A.W., Johnson, J.W., Therrien, R., Rajagopal, P., Li, T., Park, C., Edwards, A.P., Piner, E.L., Kizilyalli, I.C., & Linthicum, K.J. (2006), GaN-on-Si Reliability: A Comparitive Study between Process Platforms, Paper presented at Reliability of Compound Semiconductors Workshop 2006, San Antonio, TX. Accompanying PowerPoint Presentation.

• S. Singhal, T. Li, A. Chaudhari, A.W. Hanson, R. Therrien, J.W. Johnson, W. Nagy, J. Marquart, P. Rajagopal, J.C. Roberts, E.L. Piner, I.C. Kizilyalli and K.J. Linthicum (2006), Reliability of large periphery GaN-on-Si HFETs, Paper published in Microelectronics Reliability, Volume 46, Issue 8, August , pp. 1247-1253.

• Singhal, S., Roberts, J.C., Rajagopal, P., Li, T., Hanson, A.W., Therrien, R., Johnson, J.W., Kizilyalli, I.C., & Linthicum, K.J. (2006). GaN-on-Si Failure Mechanisms and Reliability Improvements. Paper presented at the 2006 IEEE International Reliability Physics Symposium (IRPS), San Jose, CA. Accompanying PowerPoint Presentation.

• Therrien, B., Singhal, S., Johnson, J.W., Nagy, W., Borges, R., Chaudhari, A., Hanson, A.W., Edwards, A., Marquart, J., Rajagopal, P., Park, C., Kizilyalli, I.C., & Linthicum, K.J. (2005). A mm GaN-on-Si HFET Producing 368W at 60V with 70% Drain Efficiency. Paper presented at the 2005 IEEE International Electron Devices Meeting (IEDM), Washington, DC. Accompanying PowerPoint Presentation.

• Kimball, D., Draxler, P. Jeong, J., Hsia, C., Lanfranco, S., Nagy, W., Linthicum, K., Larson, L. & Asbeck, P. (2005). 50% PAE WCDMA Basestation Amplifier Implemented with GaN HFETs. University of California at San Diego paper presented at Compound Semiconductor Week , Palm Springs, CA.

• Singhal, S., Li, T., Chaudhari, A., Hanson, A.W., Therrien, R., Johnoson, J.W., Nagy, W., Marquart, J., Rajagopal, P., Piner, E.L., & Linthicum, K.J. (2005). Reliability of Large Periphery GaN-on-Si HFETs. Paper presented at Reliability of Compound Semiconductors Workshop 2005, Palm Springs, CA.

• Nagy, W., Singhal, S., Borges, R., Johnson, J.W., Brown, J.D., Therrien, R., Chaudhari, A., Hanson, A.W., Riddle, J., Booth, S., Rajagopal, P., Piner, E.L., & Linthicum, K.L. (2005). 150W GaN-on-Si RF Power Transistor. Paper presented at the IEEE MTT-S 2005 International Microwave Symposium, Long Beach, CA. Accompanying PowerPoint Presentation.

• Kang,B.S., Kim, J., Jang, S., Ren, F., Johnson, J.W., Therrien, R.J., Rajagopal, P., Roberts, J.C., Piner, E.L., Linthicum, K.L., Chu, S.N.G., Baik, K., Gila, B.P., Abernathy, C.R., and Pearton, S.J. (2005). Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Applied Physics Letters, 86 (253502), 2005.

• Nuttinck, S., Mukhopadhyay, R., Loper, C., Singhal, S., Harris, M., & Laskar, J. (2004). Direct on-wafer non-invasive thermal monitoring of AlGaN/GaN power HFETs under microwave large signal conditions. Paper presented at European Microwave Week 2004, Amsterdam, The Netherlands.

• Johnson, J.W., Gao, J., Lucht, K., Williamson, J., Strautin, C., Riddle, J., Therrien, R., Rajagopal, P., Roberts, J.C., Vescan, A., Brown, J.D., Hanson, A., Singhal, S., Borges, R., Piner, E.L., & Linthicum, K.J. (2004). Material, process, and device development of GaN-based HFETs on silicon substrates. Electrochemical Society Proceedings 2004-06, 405.

• Kang, B.S., Kim, S., Ren, F., Johnson, J.W., Therrien, R.J., Rajagopal, P., Roberts, J.C., Piner, E.L., Linthicum, K.J., Chu, S.N.G., Baik, K., Gila, B.P., Abernathy, C.R., & Pearton, S.J. (2004). Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes. Applied Physics Letters 85(14), 2962-2964.

• Brown, J.D., Nagy, W., Singhal, S., Peters, S., Chaudhari, A., Li, T., Nichols, R., Borges, R., Rajagopal, P., Johnson, J.W., Therrien, R.J., Hanson, A.W., & Vescan, A. (2004). Performance of AlGaN/GaN HFETs fabricated on 100mm silicon substrates for wireless basestation applications. 2004 IEEE MTT-S Int. Microwave Symp. Digest, 833-836.

• Hanson, A.W., Borges, R., Brown, J.D., Cook, Jr., J.W., Gehrke, T., Johnson, J.W., Linthicum, K., Peters, S., Piner, E., Rajagopal, P., Roberts, J.C., Singhal, S., Therrien, R., & Vescan, A. (2004). Development of a GaN transistor process for linear power applications. Paper presented at the International Conference on Compound Semiconductor Manufacturing Technology (GaAs MANTECH), Miami, FL.

• Elhamri, S. Berney, R., Mitchel, W.C., Mitchell, W.D., Roberts, J.C., Rajagopal, P., Gehrke, T., Piner, E.L., & Linthicum, K.J. (2004). An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates. J. Appl. Phys. 95(12), 7982-7989.

• Johnson, J.W., Piner, E.L., Vescan, A., Therrien, R., Rajagopal, P., Roberts., J.C., Brown, J.D., Singhal, S., & Linthicum, K.L. (2004). 12W/mm AlGaN-GaN HFETs on silicon substrates. IEEE Electron Device Letters, 25(7), 459-461.

• Rajagopal, P., Roberts, J.C., Cook, Jr., J.W., Brown, J., Piner, E., Linthicum, K. (2004). MOCVD AlGaN/GaN HFETs on Si: Challenges and issues. Material Research Society Symposium Proceedings, 798, 61-66.

• Nagy, W., Brown, J., Borges, R., & Singhal, S. (2003). Linearity characteristics of microwave power GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques, (2), 660-664.

• Rajagopal, P., Gehrke, T., Roberts, J.C., Brown, J.D., Weeks., T.W., Piner, E., & Linthicum, K. (2003). Large-area, device quality GaN on Si using a novel transition layer scheme. Material Research Society Symposium Proceedings (3).

• Zhao, G., Sutton, W., Pavlidis, D., Piner, E., Schwank, J., & Hubbard, S. (2003). A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si. The IEICE Transactions on Electronics, E86-C (10), 2027-2031.

• Brown, J.D., Borges, R., Piner, E., Vescan, A., Singhal, S., & Therrien, R. (2002). AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (1 1 1) substrates. Solid State Electronics, 46, 1535-1539.

• Vescan, A., Brown, J.D., Johnson, J.W., Therrien, R., Gehrke, T., Rajagopal, P., Roberts, J.C., Singhal, S., Nagy, W., Borges, R., Piner, E., & Linthicum, K. (2002). AlGaN/GaN HFETs on 100-mm silicon substrates for commercial wireless applications. Physica Status Solidi (c), 0, No.1, 52-56.

• Singhal, S., Brown, J.D., Borges, R., Piner, E., Nagy, W., & Vescan, A. (2002). Gallium Nitride on silicon HEMTs for wireless infrastructure applications, thermal design and performance. Paper presented at the European Microwave Week, Milan, Italy.