Nitronex’s GaN-on-Silicon power transistors
meet or exceed the requirements for many applications in the WiMAX, Broadband
and Cellular markets.
Our patented Sigantic® process, named NRF1, combines the superior intrinsic
high performance of GaN devices with the economic benefit and ease of working
with large-area silicon substrates.
Nitronex Key Advantages
| • 28V & 48V products • Unmatched Broadband devices up to 80W • High breakdown voltages • High reliability gold metallization process |
• Cost-effective silicon substrate • Cost-effective plastic packaging • Power levels ranging from 5W - 240W • Lead-free and RoHS compliant |
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a current product selection guide
New
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Preview products are in Blue
2.5 GHz RF Power Transistors - Click HERE to BUY
NOW!
Click on any Part Number for
additional information
Click on any Package type to access the package drawing
Part |
Package |
Band (GHz) |
I/O Matching |
Max
Supply Voltage (V) |
Output
Power Psat (W) |
Power Gain (dB) |
CW
Drain Efficiency @ Psat (%) |
Linear
Output Power 802.16e (W) |
| NPT25015 | PO150S | 2.3-2.7 | - | 32 | 23 | 14 | 55 | 1.5 |
| NPT25100 | 2.1-2.7 |
I |
32 |
90 |
16.5 |
62 |
10 |
|
| NPT25200 | AC780B-4 | 2.3-2.7 | I | 32 | 180 | 16 | 61 | 22 |
(1):Linear Output Power 2.0% typical EVM. Single carrier OFDM waveform 64-QAM ¾, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/avg = 10.3 dB @ 0.01% probability on CCDF
3.5 GHz RF Power Transistors - Click HERE to BUY
NOW!
Click on any Part Number for
additional information
Click on any Package type to access the package drawing
Part |
Package |
Band (GHz) |
I/O Matching |
Max
Supply Voltage (V) |
Output
Power Psat (W) |
Power Gain (dB)
|
CW
Drain Efficiency @ Psat (%) |
Linear
Output Power 802.16e (W) |
| NPT35015 | PO150S | 3.3-3.8 | - | 32 | 50 | 10.5 | 18 | 1.5 |
| NPT35050A | AC780B-2 | 3.3-3.8 | I | 32 | 45 | 12 | 18 | 6.3 |
(1):Linear Output Power 2.0% typical EVM. 2.0% typical EVM. Single carrier OFDM waveform 64-QAM ¾, 8 burst, 20 ms frame, 75% filled, 3.5 MHz channel bandwidth. Peak/avg = 10.3 dB @ 0.01% probability on CCDF
Broadband Power Transistors - Click HERE to BUY
NOW!
Click on any Part Number for
additional information
Click on any Package type to access the package drawing
Part |
Package |
Band (GHz) |
I/O Matching |
Max
Supply Voltage (V) |
Output
Power Psat (W) |
Power
Gain (dB) |
CW
Drain Efficiency @ Psat (%) |
| NPTB00004 | PO150S | DC-6.0 | - | 32 | 5 / 3GHz | 15.0 / 3GHz | 56 |
| NPT25015 | PO150S | DC-4.0 | - | 32 | 21 / 3GHz | 14.5 / 3GHz | 55 |
| NPTB00025 | AC200B | DC-4.0 | - | 32 | 25 / 3GHz | 13.5 / 3GHz | 65 |
| NPTB00040 | AC360B | DC-3.0 | - | 48 |
40 / 3GHz |
15.5
- 3GHz |
60 |
| NPTB00050 | AC360B | DC-4.0 | - | 32 | 50 / 3GHz | 11.5 - 3GHz | 60 |
| NPT1004 | PO150S | DC-3.5 | - | 32 | 40 / 3GHz | 11.5 - 3GHz | 60 |
| AC360B | DC-3.0 | - | 48 | 80 / 3GHz | 15.0 / 3GHz | 65 | |
| AC360B | DC-2.0 | - | 48 | 120 / 2.5GHz | 15.0 / 2.5GHz | 65 | |
| NPTB00180 | AC360B | DC-2.0 | - | 48 | 180 / 1.5GHz | 15.0 / 1.5GHz | 65 |