Nitronex Welcomes New Vice President of
Mr. Runton has almost 20 years of RF power
semiconductor experience with six years in GaN specific product development,
including design, assembly, qualification and packaging.
Acquires Leader in Gallium Nitride RF Solutions Nitronex Corporation
Gaas Labs, LLC, a
private investment fund targeting the communications semiconductor market
led by industry veteran John Ocampo, announced today that it has acquired
privately-held Nitronex Corporation.
NASA Phase I SBIR Awarded to Nitronex.
NASA has awarded Nitronex a Phase I SBIR to study X-Band GaN Power
Amplifiers for Long Range Space RF Telecommunications.
Nitronex's new 48V GaN-on-Si Technology Significantly Expands Market
New 48V technology from Nitronex enables cooler, more reliable RF power
Nitronex has shipped over 650,000 GaN-on-Si devices to military and
Nitronex is presently the only fully-qualified supplier of Gallium
Nitride-on-Silicon (GaN-on-Si) power transistors and MMICs for RF and
In 2006, Nitronex released the first GaN qualification
report to the industry. Since then, Nitronex has continued to advance
the technology and has announced a reliable 48V process and the ability to
develop products that survive a 15:1 VSWR at all phase angles, while holding
the device at 90ºC
Check out our reliability page for more
Nitronex develops and manufactures a wide range of
GaN-on-Si RF power transistors and MMICs for commercial
and military markets. Unlike digital CMOS, the silicon used by
Nitronex has a high resistivity (10,000 Ω/cm) which provides excellent loss
characteristics at RF and microwave frequencies. Our current portfolio
includes discrete transistor products ranging from DC-6 GHz, and 5W to over
200W of output power. We also offer highly integrated standard and
custom MMIC and hybrid products.
Nitronex Features 5W GaN PA MMIC and 60W Power Transistor
Leading Producer of
GaN-on-Silicon RF Power Devices