Technology Development Engineer (PEPM0907)

Location: Durham
Department: Advanced Technology

Summary

Technology Development Engineer will execute multiple microelectronic device research projects in advanced semiconductor device (MMIC and discrete) research, design, and development. Will perform analysis, design, simulation, experimentation, prototyping, and modeling of state-of-the-art advanced III-Nitride devices for various applications including high frequency, high power, broadband and/or highly linear transistors. Specifically, design prototype RF circuit with emphasis on PA and RF front-end. Will perform hands-on semiconductor wafer process development. Will support reliability testing and failure analysis. Lead projects involving multi-disciplinary teams and subcontractor/partner management. Support development of new business and/or expansion of the product line/program with customer. Support the preparation of proposals, business plans, proposal work statements, and specifications. Technical areas of interest include high power amplifiers, solid-state device physics, power amplifier application (sub-system and system level), and III-V device processing and testing. Experience with device design and processing of wide bandgap HFET semiconductors, particularly III-Nitride, strongly desired.

We are currently looking for a Principal Engineer who has:

• PhD in EE, physics, or equivalent with 3-5 years experience or MS with 10 years experience in advanced solid-state semiconductor device R&D, including basic PA system knowledge
  
• Experience in solid-state physics and semiconductor processing of high frequency, high power, broadband, and/or highly linear device design, prototyping, and testing (3+ years)
  
• Demonstrated ability to perform device layout optimization to meet specific performance goals
  ADS or MWO capable (capability in both is a plus)
  
• Strong research and engineering management skills
  
• Strong presentation skills with ability to interface directly with customers
  
• Business development skills as well as technical rigor highly desired
  
• Proven track record of government contract technical support and successful completion; on-time and on-budget
  
• Experience with III-Nitride HFET device design and processing (particularly e-beam lithorgraphy) also very desirable (2+ years)
  

Required Skills:

PhD in electrical engineering, device physics or equivalent, with at least 3-5 years experience, or MS with 10 years experience in advanced solid-state semiconductor device research and development. Will perform analysis, design, experimentation, prototyping, and modeling of advanced III-Nitride-based processes, transistors, and power amplifiers (including matching networks) for RF applications. Understand and have demonstrated thermal management engineering to the device and circuit design. Highly motivated, with an entrepreneurial eye for generating state-of-the-art new ideas and concepts, preparing and presenting persuasive arguments for the new ideas and concepts, and developing, designing, and delivering prototypes of the ideas and concepts to funding customers/partners, on-time and on-budget.

Experience

3+ years experience in solid-state device design, processing, and testing (including load-pull, s-parameter, linearity and power) specific to high frequency, high power and highly linear transistors. Must have a track record of converting ideas into proposals that result in new contracts. Must have strong research and management skills. Must have strong presentation and communication skills with the ability to interface directly with customers. Business development skills as well as technical rigor highly desired.

To apply, submit your resume and cover letter to:

E-mail:
hr@nitronex.com
Fax: 919-807-9200

US Mail:
Attn: Human Resources
Nitronex Corporation
2305 Presidential Drive
Durham, NC 27703