Cellular RF Transistors

Nitronex GaN RF Power Transistors For
Cost-Effective Next-Generation Wireless

3G and 4G service providers are demanding not just high-performance, high-reliability equipment, but the lowest capital and operating costs possible as they build-out their infrastructure. Nitronex’s GaN-on-Silicon RF power transistors combine the superior intrinsic high performance of GaN devices with the economic benefits and ease of working with large-area standard silicon substrates making them ideal for use in next-generation wireless applications where high frequency operation, high power and high voltage are needed in combination.

Nitronex’s SIGANTIC® process* takes advantage of thermal advancements in wafer processing, transistor design and packaging to support reliable 48V amplifier operation under all waveforms and at extreme flange temperatures. These characteristics translate into improved system efficiency, greater equipment commonality, and lower operating costs.

* Nitronex’s SIGANTIC® process is the world’s only proven, fully qualified production technology for GaN RF power transistors.

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700-2200 MHz RF Power Transistors - Click HERE to BUY NOW!
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(1): Linear Output Power 2.0% typical EVM. Single carrier OFDM waveform 64-QAM ¾, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/avg = 10.3 dB @ 0.01% probability on CCDF

Technical Papers
Qualification & Reliability of a GaN Process Platform
Accompanying PowerPoint Presentation

Contact us for samples, evaluation kits or to discuss additional applications for GaN-on-silicon technology with our engineering staff.