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Nitronex’s GaN RF Power Transistors Enable Wireless Broadband

Shipping Now for Broadband Applications

Nitronex’s GaN-on-Silicon RF power transistors deliver exceptional bandwidth for high-power wireless broadband applications such as public safety radio networks, medical instrumentation and a variety of military systems.

Nitronex combines the superior intrinsic high performance of GaN devices with the economic benefits and ease of working with large-area standard silicon substrates. Nitronex’s GaN-based power transistors can be tuned to operate at frequencies from 125 MHz to 4 GHz, allowing designers to optimize amplifier power, gain and efficiency over very wide bandwidths, making them ideal for applications where high frequency operation, high power and high voltage are needed in combination.

Broadband Power Transistors - Click HERE to BUY NOW!
Click on any Part Number to access the data sheet

Part
Number

Package
Band
(GHz)
I/O
Matching
Max
Supply
Voltage
(V)
Output Power
Psat (W)
Power
Gain (dB)
CW Drain Efficiency
@ Psat (%)
NPTB00004

PO150S

DC-6.0 - 32 5 / 3GHz 15.0 / 3GHz 56
NPT25015 PO150S DC-4.0 - 32 21 / 3GHz 14.5 / 3GHz 55
NPTB00025 AC200B DC-4.0 - 32 25 / 3GHz 13.5 / 3GHz 65
NPTB00040 AC360C DC-3.0
-
48
40 / 3GHz
15.5 - 3GHz
60
NPTB00050 AC360B DC-4.0 - 32 50 / 3GHz 11.5 - 3GHz 60
NPT1004 PO150S DC-3.5 - 32 40 / 3GHz 11.5 - 3GHz 60
NPTB00080 AC360C DC-3.0 - 48 80 / 3GHz 15.0 / 3GHz 65
NPTB00120 AC360C DC-2.0 - 48 120 / 2.5GHz 15.0 / 2.5GHz 65
NPTB00180 AC360C DC-2.0 - 48 180 / 1.5GHz 15.0 / 1.5GHz 65


Contact us
for samples, evaluation kits or to discuss additional applications for GaN-on-silicon technology with our engineering staff.

 

Broadband