Click on the links below to access the Application Notes.
AN-001. Biasing
the GaN HEMT Device
The biasing of high power RF devices, especially GaN devices, requires
special attention. The concerns are mainly for preventing instabilities/oscillations,
maintaining large drain current with a small voltage drop, and bias decoupling
circuits to reduce interference with the RF matching circuit and limiting
its influence on the linearity of the device. This application note will
address these issues of biasing a Nitronex GaN HEMT.
The safe operating area of a transistor gives the user guidelines on where it is safe to bias the transistor for reliable long-term operation.
AN-003. Wideband Doherty Amplifier for WiMAX
This application note describes the operational theory of Doherty amplifiers and presents a reference design for a 2.5 - 2.7GHz, 6W symmetric Doherty based on the NPT25015.
AN-004. VSWR Testing of NPTB00050
This application note describes VSWR stress testing of the NPTB00050 device operated at P3dB and being subjected to 10:1 and 20:1 VSWR conditions.
AN-005.
2.5-2.7 GHz 20W Doherty Amplifier
for WiMAX Applications Using the NPT25100
This application note describes the operational theory and characterization
of a Doherty amplifier reference circuit that incorporates two Nitronex
NPT25100 GaN transistors.
AN-006.
Die Handling and Storage
This application note provides guidelines to assist customers in
handling and storing Nitronex GaN die in order to achieve a reliable design.
AN-007.
Device Burn-In
This application note describes Nitronex's burn-in process, its effects and
how customers can perform burn-in on die products, if needed.