Specializing in the development and manufacturing of gallium nitride-on-silicon (GaN-on-Si) RF power devices, Nitronex is the global leader in high-performance GaN-on-Si RF power devices.

Based on its patented SIGANTIC® process – gallium nitride on silicon technology – Nitronex is at the forefront of commercializing GaN technology for RF applications. The company’s ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry.

Nitronex was founded in 1999 by graduates of the wide bandgap program at North Carolina State University and is headquartered in Durham, North Carolina. It holds 21 patents with 17 others pending.